j/sst201 series vishay siliconix document number: 70233 s-40393?rev. g, 15-mar-04 www.vishay.com 1 n-channel jfets j201 sst201 j202 sst202 j204 sst204 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j/sst201 ? 0.3 to ? 1.5 ? 40 0.5 0.2 j/sst202 ? 0.8 to ? 4 ? 40 1 0.9 j/sst204 ? 0.3 to ? 2 ? 25 0.5 0.2 features benefits applications low cutoff voltage: j201 <1.5 v high input impedance very low noise high gain: a v = 80 @ 20 a full performance from low voltage power supply: down to 1.5 v low signal loss/system error high system sensitivity high quality low-level signal amplification high-gain, low-noise amplifiers low-current, low-voltage battery-powered amplifiers infrared detector amplifiers ultra high input impedance pre-amplifiers description the j/sst201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. the j/sst201 is excellent for battery powered equipment and low current amplifiers. the j series, to-226 (to-92) plastic package, provides low cost, while the sst series, to-236 (sot-23) package, provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products in t o-206aa (to-18) packaging, see the 2n4338/4339/4340/4341 data sheet. for applications information see an102 and an106. to-226aa (to-92) top view j201 j202 j204 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst201 (p1)* sst202 (p2)* sst204 (p4)* *marking code for to-236
j/sst201 series vishay siliconix www.vishay.com 2 document number: 70233 s-40393?rev. g, 15-mar-04 absolute maximum ratings gate-drain, gate-source voltage ? 40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a . derate 2.8 mw/ c above 25 c specifications (t a = 25 c unless otherwise noted) limits j/sst201 j/sst202 j/sst204 c parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 40 ? 40 ? 25 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 10 na ? 0.3 ? 1.5 ? 0.8 ? 4 ? 0.3 ? 2 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 0.2 1 0.9 4.5 0.2 3 ma gate reverse current i gss v gs = ? 20 v, v ds = 0 v ? 2 ? 100 ? 100 ? 100 pa gate reverse current i gss t a = 125 c ? 1 na gate operating current i g v dg = 10 v, i d = 0.1 ma ? 2 pa drain cutoff current i d(off) v ds = 15 v, v gs = ? 5 v 2 pa gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward t ransconductance g fs v ds = 15 v, v gs = 0 v f = 1 khz 0.5 1 0.5 ms common-source input capacitance c iss v ds = 15 v, v gs = 0 v 4.5 pf common-source reverse transfer capacitance c rss v ds = 15 v , v gs = 0 v f = 1 mhz 1.3 pf equivalent input noise voltage e n v ds = 10 v, v gs = 0 v f = 1 khz 6 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. npa, nh b. pulse test: pw 300 s duty cycle 3%. c. see 2n/sst5484 series for j204 and sst204 typical characteristic curves.
j/sst201 series vishay siliconix document number: 70233 s-40393?rev. g, 15-mar-04 www.vishay.com 3 typical characteristics (t a = 25 c unless otherwise noted) gate leakage current 2 01216 8 420 1.6 1.2 0.8 0.4 0 output characteristics v ds ? drain-source voltage (v) v gs = 0 v ? 0.6 v ? 0.9 v ? 0.3 v v gs(off) = ? 1.5 v ? 1.2 v on-resistance and output conductance vs. gate-source cutoff voltage drain current and transconductance vs. gate-source cutoff voltage 10 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 01530 v dg ? drain-gate voltage (v) i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c i d = 100 a i d = 500 a i g @ i d = 500 a i d = 100 a 0 8 6 4 2 0 ? 5 ? 4 ? 3 ? 2 ? 1 5 4 1 3 2 0 v gs(off) ? gate-source cutoff voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss 1500 0 ? 3 ? 5 ? 4 ? 2 ? 1 1200 900 600 300 0 0.01 0.1 1 2 1.6 0.8 0.4 0 10 8 4 2 0 400 01216 420 360 160 80 0 output characteristics common-source forward transconductance vs. drain current i d ? drain current (ma) v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) t a = ? 55 c 125 c ? 0.2 v ? 0.4 v ? 0.1 v ? 0.3 v r ds @ i d = 100 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds g os 6 1.2 240 8 v gs(off) = ? 0.7 v 25 c ? 0.5 v v ds = 10 v f = 1 khz v gs(off) = ? 1.5 v v gs = 0 v g os ? output conductance ( s) i dss ? saturation drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) g fs ? forward transconductance (ms) i d ? drain current (ma) i d ? drain current ( a) i g ? gate leakage (a) g fs ? forward transconductance (ms)
j/sst201 series vishay siliconix www.vishay.com 4 document number: 70233 s-40393?rev. g, 15-mar-04 typical characteristics (t a = 25 c unless otherwise noted) 2 0 ? 1.2 ? 1.6 ? 2 ? 0.8 ? 0.4 1.6 1.2 0.8 0.4 0 transfer characteristics v gs ? gate-source voltage (v) t a = ? 55 c 125 c 25 c v ds = 10 v v gs(off) = ? 1.5 v 500 0 ? 0.3 ? 0.2 ? 0.1 ? 0.4 ? 0.5 400 300 200 100 0 transfer characteristics v gs ? gate-source voltage (v) t a = ? 55 c 125 c 25 c v ds = 10 v v gs(off) = ? 0.7 v 0.1 1 0.01 4 ? 1.2 ? 2 ? 1.6 ? 0.8 ? 0.4 0 3.2 2.4 1.6 0.8 0 0.01 0.1 1 200 160 120 80 40 0 2000 1600 1200 800 400 0 i d ? drain current (ma) circuit voltage gain vs. drain current transconductance vs. gate-source voltage t a = ? 55 c 125 c v gs ? gate-source voltage (v) on-resistance vs. drain current i d ? drain current (ma) 25 c v gs(off) = ? 0.7 v ? 1.5 v v gs(off) = ? 0.7 v ? 1.5 v 1.5 0 ? 0.3 ? 0.4 ? 0.2 ? 0.1 ? 0.5 1.2 0.9 0.6 0.3 0 transconductance vs. gate-source voltage t a = ? 55 c 125 c v gs ? gate-source voltage (v) 25 c v ds = 10 v f = 1 khz v gs(off) = ? 0.7 v v ds = 10 v f = 1 khz v gs(off) = ? 1.5 v a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d g fs ? forward transconductance (ms) g fs ? forward transconductance (ms) r ds(on) ? drain-source on-resistance ( ? ) i d ? drain current (ma) i d ? drain current ( a) a v ? voltage gain
j/sst201 series vishay siliconix document number: 70233 s-40393?rev. g, 15-mar-04 www.vishay.com 5 typical characteristics (t a = 25 c unless otherwise noted) common-source input capacitance vs. gate-source voltage 10 0 ? 12 ? 16 ? 20 ? 8 ? 4 8 6 4 2 0 5 0 ? 12 ? 20 ? 16 ? 8 ? 4 4 3 2 1 0 common-source reverse feedback capacitance vs. gate-source voltage v gs ? gate-source voltage (v) v ds = 0 v 10 v f = 1 mhz v gs ? gate-source voltage (v) v ds = 0 v 10 v f = 1 mhz 10 100 1 k 100 k 10 k 20 16 12 8 4 0 output conductance vs. drain current i d ? drain current (ma) t a = ? 55 c 125 c equivalent input noise voltage vs. frequency f ? frequency (hz) v ds = 10 v i d @ 100 a v gs = 0 v 3 2.4 1.8 0.8 0.4 0 0.01 0.1 1 25 c output characteristics 300 0 0.5 240 180 120 60 0 v ds ? drain-source voltage (v) 0.1 0.2 0.3 0.4 output characteristics 1.0 0 1.0 0.8 0.6 0.4 0.2 0 v ds ? drain-source voltage (v) 0.2 0.4 0.6 0.8 v gs(off) = ? 0.7 v v gs = 0 v ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 v gs(off) = ? 1.5 v v gs = 0 v ? 0.3 ? 0.6 ? 0.9 ? 1.2 v ds = 10 v f = 1 khz v gs(off) = ? 1.5 v e n ? noise voltage nv / hz i d ? drain current (ma) i d ? drain current ( a) g os ? output conductance ( s) c iss ? input capacitance (pf) c rss ? reverse feedback capacitance (pf)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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